Scientific program


Monday, 27 june 2011

 

8h00

Welcome Session / Registration

 

10h00

Plenary Session

 

 

Session                                                       « SiC heteroepitaxial growth »

 

10h30

I-1

Progress in cubic silicon carbide – growth and novel applications

Rositza Yakimova (Linköping University, Sweden)

 

 

 

ORAL Session 1

 

 

11h10

O-1

CVD growth of 3C-SiC on 4H-SiC substrate

Anne Henry, Xun Li, Erik Janzén (Linköping University, Sweden)

 

 

11h30

O-2

Growth of 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Rachael Myers-Ward, Eugene Imhoff, Joshua Caldwell, Luke Nyakiti, Virginia Wheeler, Karl Hobart, Charles Eddy Jr., Kurt Gaskill (U.S. Naval Research Laboratory, USA)

 

 

11h50

O-3

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Philip Hens, Remigijus Vasiliauskas, Valdas Jokubavicius, Rickard Liljedahl, Günter Wagner, Rositza Yakimova, Peter Wellmann, Mikael Syväjärvi (University Erlangen-Nuremberg, Germany)

 

 

12h10

O-4

Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by Vapour-Liquid-Solid mechanism on patterned 4H-SiC substrate

Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, François Cauwet, Gabriel Ferro (LMI, UMR 5615, France)

 

 

 

Lunch 12h30 - 14h00

 

 

Session                     « Power devices on wide band gap semiconductor – PART I »

 

14h00

I-2

Development and production of Power Devices in silicon carbide and gallium nitride

Salvatore Coffa (STMicroelectronics, Italy)

 

 

 

ORAL Session 2

 

 

14h40

O-5

The role of nickel on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

Farah Laariedh, Mihai Lazar, Pierre Cremillieu, Jean-Louis Leclercq, Dominique Planson (INSA-Lyon, Laboratoire AMPERE, France)

 

 

15h00

O-6

Barrier inhomogeneities of large area Mo/4H-SiC Schottky diodes

M Yousuf Zaman, Denis Perrone, Sergio Ferrero, Luciano Scaltrito, Marco Naretto (politecnico di Torino, Italy)

 

 

15h20

O-7

SiC JBS diode Compact Model for Process Variability analysis by means TCAD Tools

D. Sutera, V. Cinnera Martino, S. Rinaudo (STMicroelectronics, Italy)

 

 

15h40

O-8

Nano-analytical and electrical characterisation of 4H-SiC MOSFETs by the MobiSiC consortium

Ana Maria Beltran, Vincent Mortet, Eléna Bedel, Fuccio Cristiano, Sylvie Schamm-Chardon, Christian Strenger, Volker Häublein, Anton Bauer (CEMES, France)

 

 

 

Break 30 min

 

 

POSTER Session

16h30 – 18h30

 

 

 

Wine in Touraine

 

 

 

 

 

Tuesday, 28 june 2011

 

 

Session                   « Microsystems and Micro-Structures based on sic – PART I »

 

8h30

I-3

3C-SiC actuators and sensors

Rebecca Cheung (Scottish Microelectronics Centre, UK)

 

 

 

ORAL Session 3

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9h10

O-9

Mechanical properties and residual stress evaluation on heteroepitaxial 3C-SiC/Si for MEMS application

Ruggero Anzalone, Giuseppe D'Arrigo, Massimo Camarda, Nicolò Piluso, Francesco La Via (CNR-IMM, Italy)

 

 

9h30

O-10

Study of microstructures deflections and film/substrate curvature under generalized stress fields for MEMS applications

Massimo Camarda, Ruggero Anzalone, Giuseppe D'arrigo, Andrea Severino, Nico Piluso,  Andrea Canino, Francesco La Via, Antonino La Magna (CNR-IMM, Italy)

 

 

9h50

O-11

Development of a novel polySiC-on-oxide MEMS process

Christopher Locke, Christopher L. Frewin, Stephen E. Saddow (Electrical Engineering Dept., University of South Florida, USA)

 

 

Break 30 min

 

ORAL Session 4  « Microsystems and Micro-Structures based on sic – Part II »

 

 

10h40

O-12

A general overview on heteroepitaxial 3C-SiC characterization

Andrea Severino, Christopher Locke, Ruggero Anzalone, Nicolò Piluso, Antonino La Magna, Stephen E. Saddow, Giuseppe Abbondanza, Francesco La Via, Marco Mauceri, Massimo Camarda, Andrea Canino (CNR-IMM, Italy)

 

 

11h00

O-13

Si/3C-SiC/Si heterostructure fabrication by Low Pressure Chemical Vapor Deposition

Sai Jiao, Marc Portail, Jean-François Michaud, Marcin Zielinski, Thierry Chassagne, Daniel Alquier (Université François Rabelais, Laboratoire de Microélectronique de Puissance, France)

 

 

11h20

O-14

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma

Jihoon Choi, Laurence Latu-Romain, Edwige Bano (IMEP-LAHC/ Grenoble INP, MINATEC, France)

 

 

11h40

O-15

Material limitations for the development of high performance SiC NWFETs

Konstantinos Zekentes, Konstantinos Rogdakis, Edwige Bano (Institute of Electronic Structure & Laser, Greece)

 

 

 

Lunch 12h00 - 14h00

 

 

Session                                                         « Devices on Silicon Carbide »

 

14h00

I-4

High quality 3C-SiC substrate for MOSFET fabrication

Hiroyuki Nagasawa (Hoya, Japan)

 

 

 

ORAL Session 5

 

 

14h40

O-16

Band diagram determination of the MOS structures with different gate materials on 3C-SiC substrate

Krzysztof Piskorski, Henryk M. Przewlocki, Romain Esteve, Mietek Bakowski (Institute of Electron Technology, Poland)

 

 

15h00

O-17

Design of Digital Electronics for High Temperature using Basic Logic Gates made of 4H-SiC MESFETS

Mihaela Alexandru, Viorel Banu, Miquel Vellvehi, Philippe Godignon, Jose Millan (IMB-CNM, CSIC, Barcelona, Spain)

 

 

15h20

O-18

The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capacitors

Tomasz Gutt, Tomasz Malachowski, Henryk M. Przewlocki, Olof Engstroem, Mietek Bakowski,  Romain Esteve (Institute of Electron Technology, Poland)

 

 

15h40

O-19

Electrical charcteristics of the UV-Photodetector device: from the p-i-n structure to the Junction Barrier Schottky structure

S. Biondo, L. Ottaviani, W. Vervisch, O. Palais (IM2NP - UMR 6242, France)

 

 

 

Break 30 min

 

 

 

POSTER Session

16h30 – 18h30

 

 

 

 

18h30 : Bus transfer to city hall of Tours

 

 

City Hall reception

 

 

 

 

 

Wednesday, 29 june 2011

 

 

Session                                           « GaN : From material to power devices »

 

8h30

I-5

Thick strain engineered GaN based structures on silicon for high breakdown voltage Schottky diodes

Yvon Cordier (CRHEA-CNRS, France)

 

 

 

ORAL Session 6

 

 

9h10

O-20

Microstructure and transport properties in alloyed Ohmic contacts to p-type SiC and GaN for power devices applications

Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Mike Leszczyński, Pawel Pristawko, Edoardo Zanetti, Mario Saggio, Vito Raineri (CNR-IMM - Italy)

 

 

9h30

O-21

Investigations on the Origin of the Ohmic Behavior  for Ti / Al based Contacts on n-type GaN

Nicolas Thierry-Jebali, Oliver Menard, Christiane Dubois, Dominique Tournier, Emmanuel Collard, Christian Brylinski, Frédéric Cayrel, Daniel Alquier (AMPERE, INSA LYON  & LMI, University of LYON 1, France)

 

 

9h50

O-22

Si Implantation and Activation in GaN. Comparison of Two Materials: GaN on Sapphire and GaN on Silicon

Anne-Elisabeth Bazin, Mohamed Lamhamdi, Frédéric Cayrel, Arnaud Yvon, Jean-Christophe Houdbert, Emmanuel Collard, Daniel Alquier (STMicroelectronics, France)

 

 

 

Break 30 min

 

 

Session                    « power devices on wide band gap semiconductor – part ii »

 

10h40

I-6

MOCVD grown AlGaN/GaN transistors on Si substrate for High Breakdown Applications

S. Lawrence Selvaraj (Nagoya Institute of Technology, Japan)

 

 

 

ORAL Session 7

 

 

11h20

O-23

Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations

Cristina Miccoli, Valeria Cinnera Martino, Salvatore Rinaudo (STMicroelectronics, Italy)

 

 

11h40

O-24

GaN-on-Silicon Evaluation for High-Power MMIC Applications

Alessio Pantellini, Claudio Lanzieri, Antonio Nanni, Andrea Bentini, Walter Ciccognani, Sergio Colangeli, Ernesto Limiti (Selex-SI, Italy)

 

 

12h00

O-25

Deep GaN Etching by Inductively Coupled Plasma

J. Ladroue, M. Boufnichel, T. Tillocher, P. Lefaucheux, P. Ranson, R. Dussart (GREMI, France)

 

 

 

Lunch 12h20 - 14h00

 

 

 

Session                                         « CHARACTERIZATION : material and device »

 

14h00

I-7

Nanoscale characterisation of transport properties in epitaxial graphene on SiC

Filippo Giannazzo (CNR-IMM, Italy)

 

 

 

ORAL Session 8

 

 

14h40

O-26

Relative intensity of low temperature photoluminescence signals for 3C-SiC grown on 6H-SiC by sublimation epitaxy

Georgios Zoulis, Jianwu Sun, Remis Vasiliauskas, Jean Lorenzzi, Hervé Peyre, Mikael Syvajarvi, Gabriel Ferro, Sandrine Juillaguet, R. Yakimova, Jean Camassel (CNRS, UMR 5221- L2C, France)

 

 

15h00

O-27

Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si

Xi Song, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Daniel Alquier, T. Chassagne, E. Collard (Laboratoire de microélectronique de puissance / STMicroelectronics, France)

 

 

15h20

O-28

Metrological potential of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures

P. Ščajev, P. Onufrijevs, G. Manolis, M. Karaliūnas,  N. Jegenyes, J. Lorenzzi, M. Beshkova,  R. Vasiliauskas, M. Kato and K. Jarašiūnas (Institute of Applied Research, Vilnius University, Lithuania)

 

 

16h00 : Bus transfer to Amboise Castle

 

 

Visit of Amboise Castle

Conference dinner

 

 

 

 

 

Thursday, 30 june 2011

 

 

Session                                                                             « GRAPHENE »

 

9h00

I-8

Epitaxial graphene on SiC(0001): electronic structure and transport measurements

Thomas Seyller (Erlangen University, Germany)

 

 

 

ORAL Session 9

 

 

9h40

O-29

Growth of epitaxial graphene on 3C-SiC/Si heterostructure

Maki Suemitsu, Hirokazu Fukidome (RIEC, Tohoku Univ., Japan)

 

 

10h00

O-30

Fabrication of ultrasensitive nano-biosensors on epitaxial graphene

O.J. Guy, A. Castaing, G. Burwell, Z. Tehrani (School of Engineering, Swansea University, U.K)

 

 

 

Break 30 min

 

 

Session                                                                             « GRAPHENE »

 

10h50

I-9

Monolayer Graphene grown on non polar surface (11-20) 6H-SiC

Nicolas Camara (Laboratoire Charles Coulomb, France)

 

 

 

ORAL Session 10

 

 

11h30

O-31

Growth, structural and electrical properties of few-layer graphene grown on 6H-SiC and 3C-SiC/Si using propane-CVD

Adrien Michon, Marc Portail, Elodie Roudon, Yvon Cordier, Antoine Tiberj, Fabien Cheynis, Ludovic Largeau, Marcin Zielinski, D. Lefebvre, P. Vennéguès, S. Vézian, J.-R. Huntzinger, N.Camara, F. Leroy, P. Müller, O. Mauguin, T. Chassagne and J. Camassel (CRHEA-CNRS, France)

 

 

11h50

O-32

Epitaxial Graphene Layers on 3C-SiC(100)/Si(100)

N. Gogneau, M. Ridene, R. Belkhou, A. Michon, M. Portail, A. Ouerghi (CNRS- Laboratoire de Photonique et de Nanostructures, France)

 

 

 

12h10                                                                                    Conclusion

 

 


POSTER Session

 

 

P-1

Study of Two Fluences of Si Ion Implanted Gallium Nitride
Anne-Elisabeth Bazin, Frédéric Cayrel, Mohamed Lamhamdi, Arnaud Yvon, Emmanuel Collard, Daniel Alquier

 

 

P-2

Investigation of n- and p -type 3C-SiC films grown by sublimation in vacuum
Alexander Lebedev

 

 

P-3

The Electrical Behavior of Deep Defect in AlGaN/GaN/SiC HEMTs
Nadia Benseddik, Zinab Benamara, Halima Mazari, Kheira Ameur, Ali Soltani, Jean Marie Bluet

 

 

P-4

Selective b-SiC/SiO2 core-shell NW growth on patterned silicon substrate
Giovanni Attolini, Francesca Rossi, Filippo Fabbri, Giancarlo Salviati, Matteo Bosi, Bernard Enrico Watts

 

 

P-5

Getting films of solid solutions (SiC)1-x(AlN)x sputtering a composite target.
Malik Kurbanov, Shihgasan Ramazanov, Bilal Arugovich, Gadzhimet Safaraliev

 

 

P-6

Visible and deep ultraviolet study of SiC / SiO2 interface
Pawel Borowicz, Tomasz Gutt, Tomasz Malachowski, Mariusz Latek

 

 

P-7

Characterization and electric modeling of the Schottky structures containing GaN
Resk Khelif, H. Mazari, S. Mansouri, Z. Benamara, M.Mostefaoui, KAmeur, N. Benseddik

 

 

P-8

The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers
Giovanni Attolini, Matteo Bosi, Bernard Watts, Gabor Battistig, László Dobos, Béla Pécz

 

 

P-9

Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC
Jérôme Biscarrat, Xi Song, Jean-François Michaud, Frédéric Cayrel, Marc Portail, Marcin Zielinski, Thierry Chassagne, Emmanuel Collard, Daniel Alquier

 

 

P-10

Growth by VLS transport of 3C-SiC on Si with CVD grown SiC buffer layer
Stephane Berckmans, Laurent Auvray, Gabriel Ferro, Francois Cauwet, Veronique Souliere, Emmanuel Collard, Jean-Baptiste Quoirin, Christian Brylinski

 

 

P-11

High Temperature Capability of High Voltage 4H-SiC JBS
Maxime Berthou, Philippe Godignon

 

 

P-12

Study of the Growth of ZnO and Ag admixed ZnO Nanoparticles (NPs) in the Solution
Jai Singh, P. Kumar, R.S. Tiwari, . O.N. Srivastava

 

 

P-13

Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates
Andrea Severino, Massimo Camarda, Alessandra Alberti, Ruggero Anzalone, Nicolò Piluso, Andrea Canino, Antonino La Magna, Francesco La Via, Giuseppe D'Arrigo

 

 

P-14

3C-SiC pn – structures created by sublimation epitaxy and ion implantation on 6H-SiC substrates
Anatoly Strel'chuk, Alexander Lebedev, Sergei Lebedev, Evgenia Kalinina, Sergei Belov

 

 

P-15

Detailed experimental study of stress and stress gradient in thin 3C-SiC films performed using micromachined cantilevers
Sai Jiao, Marcin Zielinski, Jean-François Michaud, Thierry Chassagne, Marc Portail, Daniel Alquier

 

 

P-16

3C-SiC Neural Probes for Long-Term Brain Machine Interface Applications
C. Locke, J. Weatherwax, C. Frewin, E. Weeber, S.E. Saddow

 

 

P-17

Residual doping in GaN

Mathieu Leroux, Yvon Cordier, Frank Natali, Magdalena Chmielowska (CRHEA-CNRS, France)

 

 

P-18

Effect of Metal Work-function Difference on the Properties of Schottky Contacts with Embedded Nano-Particles in 4H-SiC
Min-Seok Kang, Sang-Mo Koo

 

 

P-19

Parallel and serial association of SiC light triggered thyristors
Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson

 

 

P-20

Low Temperature Photoluminescence Investigations of 4 inch SiC wafers: a tool for power device development
Hervé Peyre, Jianwu Sun, Jawad El Hassam, Sandrine Juillaguet, Anne Henry, Sylvie Contreras, Pierre Brosselard, Jean Camassel

 

 

P-21

Comparison of GaN-based MOS structures with different techniques of CVD
Elias Al Alam, Ignasi Cortés, Thomas Begou, Antoine Goullet, Frédéric Morancho, Alain Cazarré, Philippe Regreny, Julien Brault, Yvon Cordier, Marie-Paule Besland, Karine Isoird

 

 

P-22

Evaluation of correct value of Richardson’s constant by analyzing the electrical behavior of three different diodes at different temperatures

M. Yousuf Zaman, Sergio Ferrero, Luciano Scaltrito, Denis Perrone, Marco Naretto

 

 

P-23

Investigation of Al/Ti ohmic contact to N-type 4H-SiC

A.Drevin-Bazin, J-F.Barbot, T.Cabioch, M-F.Beaufort

 

 

P-24

Mechanical properties modification of 3C-SiC heteroepitaxial films induced by defects formation

G. D’Arrigo, R. Anzalone, N. Piluso,G. Milazzo, A. Sciuto

 

 

P-25

Two dimensions (2D) dopant profiles for p-n junctions in Gallium Nitride by Scanning Capacitance Microscopy

Mohamed Lamhamdi, Frédéric Cayrel, Anne-Elizabeth Bazin, Arnaud Yvon, Emmanuel Collard, Daniel Alquier

 

 

P-26

High frequency 3C-SiC AFM cantilever using thermal actuation and metallic piezoresistivity detection

R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, D. Martrou, S. Gauthier

 

 

P-27

SiC quantum dots for bio-compatible cell labeling

J-M Bluet, J. Botsoa, Y. Zakharko, A. Geloen, S. Alekseev, O. Marty, B. Mognetti, S. Patskovsky, D.Rioux, V. Lysenko

 

 

P-28

Room light anodic etching of high doped n-type 4H-SiC on C and Si crystalline faces in HF electrolytes

G. Gautier, F. Cayrel, X. Song and J-F. Michaud